![SSF2319CJ1 SSF2319CJ1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5018/MFG_GSBAT54AT.jpg)
SSF2319CJ1 Good-Ark Semiconductor
![SSF2319CJ1.pdf](/images/adobe-acrobat.png)
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
53+ | 0.34 EUR |
63+ | 0.28 EUR |
100+ | 0.18 EUR |
250+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSF2319CJ1 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 450mA (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V, Power Dissipation (Max): 312mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote SSF2319CJ1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
SSF2319CJ1 | Hersteller : Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 312mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |