SQW33N65EF-GE3 Vishay / Siliconix
auf Bestellung 5135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.86 EUR |
| 10+ | 5.76 EUR |
| 250+ | 5.03 EUR |
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Technische Details SQW33N65EF-GE3 Vishay / Siliconix
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQW33N65EF-GE3 nach Preis ab 4.56 EUR bis 6.88 EUR
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SQW33N65EF-GE3 | Hersteller : Vishay Siliconix |
 Description: E SERIES POWER MOSFET WITH FASTPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 519 Stücke: Lieferzeit 10-14 Tag (e) |
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