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SQSA12CENW-T1_GE3

SQSA12CENW-T1_GE3 Vishay Siliconix

sqsa12cenw.pdf Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.54 EUR
6000+ 0.51 EUR
9000+ 0.47 EUR
Mindestbestellmenge: 3000
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Technische Details SQSA12CENW-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQSA12CENW-T1_GE3 nach Preis ab 0.53 EUR bis 1.47 EUR

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SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay Siliconix sqsa12cenw.pdf Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
15+ 1.23 EUR
100+ 0.85 EUR
500+ 0.71 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 13
SQSA12CENW-T1_GE3 SQSA12CENW-T1_GE3 Hersteller : Vishay / Siliconix sqsa12cenw.pdf MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET
auf Bestellung 26568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.47 EUR
10+ 1.28 EUR
100+ 0.89 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
3000+ 0.56 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 2
SQSA12CENW-T1_GE3 Hersteller : Vishay sqsa12cenw.pdf N-CHANNEL 100-V (D-S) 175C MOSFET
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