Produkte > VISHAY SILICONIX > SQS966ENW-T1_GE3
SQS966ENW-T1_GE3

SQS966ENW-T1_GE3 Vishay Siliconix

sqs966enw.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.65 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SQS966ENW-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 6A PWRPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W Dual, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27.8W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V, Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W Dual, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQS966ENW-T1_GE3 nach Preis ab 0.61 EUR bis 1.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQS966ENW-T1_GE3 SQS966ENW-T1_GE3 Hersteller : Vishay Semiconductors sqs966enw.pdf MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8W
auf Bestellung 40960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.56 EUR
10+ 1.24 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
3000+ 0.64 EUR
6000+ 0.61 EUR
Mindestbestellmenge: 2
SQS966ENW-T1_GE3 SQS966ENW-T1_GE3 Hersteller : Vishay Siliconix sqs966enw.pdf Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
14+ 1.28 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 12
SQS966ENW-T1_GE3 SQS966ENW-T1_GE3 Hersteller : Vishay sqs966enw.pdf Trans MOSFET N-CH 60V 6A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)