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SQS142ENW-T1_GE3 Vishay Siliconix
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Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.57 EUR |
6000+ | 0.54 EUR |
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Technische Details SQS142ENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Power Dissipation (Max): 113W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQS142ENW-T1_GE3 nach Preis ab 0.53 EUR bis 1.5 EUR
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SQS142ENW-T1_GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 38189 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS142ENW-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS142ENW-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQS142ENW-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 271A Power dissipation: 113W Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQS142ENW-T1/GE3 | Hersteller : Vishay | Vishay |
Produkt ist nicht verfügbar |
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SQS142ENW-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 110A; Idm: 271A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 271A Power dissipation: 113W Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |