SQM120P10_10M1LGE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.66 EUR |
| 1600+ | 3.13 EUR |
| 2400+ | 2.95 EUR |
| 5600+ | 2.83 EUR |
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Technische Details SQM120P10_10M1LGE3 Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQM120P10_10M1LGE3 nach Preis ab 3.12 EUR bis 6.05 EUR
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SQM120P10_10M1LGE3 | Hersteller : Vishay Semiconductors |
MOSFET P Ch -100Vds 20Vgs |
auf Bestellung 5521 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM120P10_10M1LGE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5884 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM120P10_10M1LGE3 | Hersteller : VISHAY |
Description: VISHAY - SQM120P10_10M1LGE3 - Leistungs-MOSFET, p-Kanal, 100 V, 120 A, 0.0081 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0081ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 2896 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120P10_10M1LGE3 | Hersteller : VISHAY |
Description: VISHAY - SQM120P10_10M1LGE3 - Leistungs-MOSFET, p-Kanal, 100 V, 120 A, 0.0081 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0081ohm SVHC: Lead (19-Jan-2021) |
auf Bestellung 2896 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM120P10_10M1LGE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |