SQM110P06-8M9L_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7450 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.05 EUR |
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Technische Details SQM110P06-8M9L_GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7450 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM110P06-8M9L_GE3 nach Preis ab 2.57 EUR bis 5.09 EUR
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SQM110P06-8M9L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7450 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1249 Stücke: Lieferzeit 10-14 Tag (e) |
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SQM110P06-8M9L_GE3 | Hersteller : Vishay / Siliconix |
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SQM110P06-8M9L_GE3 | Hersteller : Vishay |
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auf Bestellung 2345 Stücke: Lieferzeit 14-21 Tag (e) |
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SQM110P06-8M9L-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |