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SQM10250E_GE3

SQM10250E_GE3 Vishay Siliconix

sqm10250e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.06 EUR
1600+ 2.62 EUR
2400+ 2.47 EUR
5600+ 2.37 EUR
Mindestbestellmenge: 800
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Technische Details SQM10250E_GE3 Vishay Siliconix

Description: MOSFET N-CH 250V 65A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQM10250E_GE3 nach Preis ab 2.6 EUR bis 5.07 EUR

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SQM10250E_GE3 SQM10250E_GE3 Hersteller : Vishay / Siliconix sqm10250e.pdf MOSFET 250V Vds 20V Vgs TO-263
auf Bestellung 12435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.05 EUR
10+ 4.26 EUR
25+ 4.1 EUR
100+ 3.43 EUR
250+ 3.34 EUR
500+ 3.06 EUR
800+ 2.6 EUR
SQM10250E_GE3 SQM10250E_GE3 Hersteller : Vishay Siliconix sqm10250e.pdf Description: MOSFET N-CH 250V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.07 EUR
10+ 4.26 EUR
100+ 3.44 EUR
Mindestbestellmenge: 4
SQM10250E_GE3 SQM10250E_GE3 Hersteller : Vishay sqm10250e.pdf Trans MOSFET N-CH 250V 65A Automotive 3-Pin(2+Tab) D2PAK
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