SQJQ906E-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2 N-CH 40V POWERPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 2.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJQ906E-T1_GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8 Dual, Part Status: Active.
Weitere Produktangebote SQJQ906E-T1_GE3 nach Preis ab 1.88 EUR bis 4.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJQ906E-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET 40V Vds Dual N-Ch AEC-Q101 Qualified |
auf Bestellung 13970 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SQJQ906E-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Part Status: Active |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|