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SQJQ402E-T1_GE3

SQJQ402E-T1_GE3 Vishay / Siliconix

sqjq402e-1764530.pdf Hersteller: Vishay / Siliconix
MOSFET N-Channel 40V AEC-Q101 Qualified
auf Bestellung 3878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.7 EUR
10+ 4.24 EUR
100+ 3.41 EUR
500+ 2.8 EUR
1000+ 2.32 EUR
2000+ 2.2 EUR
4000+ 2.13 EUR
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Technische Details SQJQ402E-T1_GE3 Vishay / Siliconix

Description: MOSFET N-CH 40V 200A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V.

Weitere Produktangebote SQJQ402E-T1_GE3 nach Preis ab 2.46 EUR bis 5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 Hersteller : Vishay Siliconix sqjq402e.pdf Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5 EUR
10+ 4.49 EUR
100+ 3.61 EUR
500+ 2.97 EUR
1000+ 2.46 EUR
Mindestbestellmenge: 4
SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 Hersteller : Vishay sqjq402e.pdf Trans MOSFET N-CH 40V 200A Automotive
Produkt ist nicht verfügbar
SQJQ402E-T1_GE3 SQJQ402E-T1_GE3 Hersteller : Vishay Siliconix sqjq402e.pdf Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V
Produkt ist nicht verfügbar