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SQJQ140E-T1_GE3

SQJQ140E-T1_GE3 Vishay Siliconix

sqjq140e.pdf Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2.63 EUR
6000+ 2.52 EUR
Mindestbestellmenge: 2000
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Technische Details SQJQ140E-T1_GE3 Vishay Siliconix

Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 701A (Tc), Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V.

Weitere Produktangebote SQJQ140E-T1_GE3 nach Preis ab 2.78 EUR bis 5.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJQ140E-T1_GE3 SQJQ140E-T1_GE3 Hersteller : Vishay / Siliconix sqjq140e.pdf MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
auf Bestellung 7673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.39 EUR
10+ 4.52 EUR
25+ 4.38 EUR
100+ 3.66 EUR
250+ 3.56 EUR
500+ 3.26 EUR
1000+ 2.78 EUR
SQJQ140E-T1_GE3 SQJQ140E-T1_GE3 Hersteller : Vishay Siliconix sqjq140e.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 9656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.4 EUR
10+ 4.53 EUR
100+ 3.66 EUR
500+ 3.26 EUR
1000+ 2.79 EUR
Mindestbestellmenge: 4
SQJQ140E-T1_GE3 Hersteller : Vishay sqjq140e.pdf Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK 8 x 8L, 0.53 m @ 10V
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