SQJB80EP-T1_GE3 Vishay / Siliconix
auf Bestellung 13928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.06 EUR |
10+ | 1.69 EUR |
100+ | 1.31 EUR |
500+ | 1.11 EUR |
1000+ | 0.9 EUR |
3000+ | 0.85 EUR |
6000+ | 0.83 EUR |
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Technische Details SQJB80EP-T1_GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 80V 30A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V, Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJB80EP-T1_GE3 nach Preis ab 0.91 EUR bis 2.06 EUR
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SQJB80EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1745 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJB80EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |