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SQJB48EP-T1_GE3

SQJB48EP-T1_GE3 Vishay / Siliconix

sqjb48ep.pdf Hersteller: Vishay / Siliconix
MOSFET DUAL N-CHANNEL 40-V (D-S) MOSFET
auf Bestellung 2285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.48 EUR
10+ 2.04 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.24 EUR
3000+ 1.06 EUR
6000+ 0.99 EUR
Mindestbestellmenge: 2
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Technische Details SQJB48EP-T1_GE3 Vishay / Siliconix

Description: DUAL N-CHANNEL 40-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

Weitere Produktangebote SQJB48EP-T1_GE3 nach Preis ab 1.28 EUR bis 2.82 EUR

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SQJB48EP-T1_GE3 SQJB48EP-T1_GE3 Hersteller : Vishay Siliconix sqjb48ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.82 EUR
10+ 2.51 EUR
100+ 1.96 EUR
500+ 1.62 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 7
SQJB48EP-T1_GE3 SQJB48EP-T1_GE3 Hersteller : Vishay Siliconix sqjb48ep.pdf Description: DUAL N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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