Produkte > VISHAY SEMICONDUCTORS > SQJ411EP-T1_GE3
SQJ411EP-T1_GE3

SQJ411EP-T1_GE3 Vishay Semiconductors

sqj411ep.pdf Hersteller: Vishay Semiconductors
MOSFET -12V Vds -60A Id AEC-Q101 Qualified
auf Bestellung 4758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.08 EUR
10+ 1.72 EUR
100+ 1.33 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
3000+ 0.86 EUR
6000+ 0.82 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJ411EP-T1_GE3 Vishay Semiconductors

Description: MOSFET P-CH 12V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V.

Weitere Produktangebote SQJ411EP-T1_GE3 nach Preis ab 0.91 EUR bis 2.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Hersteller : Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.08 EUR
11+ 1.69 EUR
100+ 1.32 EUR
500+ 1.12 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Hersteller : Vishay sqj411ep.pdf Trans MOSFET P-CH 12V 60A Automotive 8-Pin PowerPAK SO EP
Produkt ist nicht verfügbar
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Hersteller : Vishay sqj411ep.pdf Trans MOSFET P-CH 12V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO
Produkt ist nicht verfügbar
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Hersteller : Vishay sqj411ep.pdf Trans MOSFET P-CH 12V 60A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO
Produkt ist nicht verfügbar
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Hersteller : Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
Produkt ist nicht verfügbar