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SQJ411EP-T1_GE3 Vishay Semiconductors
auf Bestellung 4758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.08 EUR |
10+ | 1.72 EUR |
100+ | 1.33 EUR |
500+ | 1.13 EUR |
1000+ | 0.92 EUR |
3000+ | 0.86 EUR |
6000+ | 0.82 EUR |
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Technische Details SQJ411EP-T1_GE3 Vishay Semiconductors
Description: MOSFET P-CH 12V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V.
Weitere Produktangebote SQJ411EP-T1_GE3 nach Preis ab 0.91 EUR bis 2.08 EUR
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SQJ411EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V |
auf Bestellung 2994 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ411EP-T1_GE3 | Hersteller : Vishay |
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SQJ411EP-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQJ411EP-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQJ411EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V |
Produkt ist nicht verfügbar |