Produkte > VISHAY SILICONIX > SQD10950E_GE3
SQD10950E_GE3

SQD10950E_GE3 Vishay Siliconix

sqd10950e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 11.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.95 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details SQD10950E_GE3 Vishay Siliconix

Description: MOSFET N-CH 250V 11.5A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SQD10950E_GE3 nach Preis ab 0.9 EUR bis 2.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQD10950E_GE3 SQD10950E_GE3 Hersteller : Vishay / Siliconix sqd10950e.pdf MOSFETs N-CHANNEL 250-V (D-S) 175C MOSFET
auf Bestellung 2451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.27 EUR
10+ 1.87 EUR
100+ 1.45 EUR
500+ 1.23 EUR
1000+ 1 EUR
2000+ 0.94 EUR
4000+ 0.9 EUR
Mindestbestellmenge: 2
SQD10950E_GE3 SQD10950E_GE3 Hersteller : Vishay Siliconix sqd10950e.pdf Description: MOSFET N-CH 250V 11.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.29 EUR
10+ 1.87 EUR
100+ 1.46 EUR
500+ 1.23 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 8
SQD10950E_GE3 Hersteller : Vishay sqd10950e.pdf N-Channel MOSFET
Produkt ist nicht verfügbar
SQD10950E_GE3 Hersteller : Vishay sqd10950e.pdf N-Channel MOSFET
Produkt ist nicht verfügbar