SQ4284EY-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.17 EUR |
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Produktbewertung abgeben
Technische Details SQ4284EY-T1_BE3 Vishay Siliconix
Description: VISHAY - SQ4284EY-T1"BE3 - MOSFET, DUAL, N-CH, 40V, 8A, SOIC, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 0, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 0, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 0, Drain-Source-Durchgangswiderstand, p-Kanal: 0, Verlustleistung, p-Kanal: 0, Drain-Source-Spannung Vds, n-Kanal: 0, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pins, Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0, productTraceability: No, Kanaltyp: N Channel, Verlustleistung, n-Kanal: 0, Betriebstemperatur, max.: 175°C, directShipCharge: 25, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SQ4284EY-T1_BE3 nach Preis ab 1.11 EUR bis 2.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SQ4284EY-T1_BE3 | Hersteller : Vishay Semiconductors | MOSFET DUAL N-CHANNEL 40V |
auf Bestellung 11460 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4284EY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5062 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4284EY-T1"BE3 | Hersteller : VISHAY |
Description: VISHAY - SQ4284EY-T1"BE3 - MOSFET, DUAL, N-CH, 40V, 8A, SOIC tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 0 usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 0 Drain-Source-Durchgangswiderstand, p-Kanal: 0 Verlustleistung, p-Kanal: 0 Drain-Source-Spannung Vds, n-Kanal: 0 euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0 productTraceability: No Kanaltyp: N Channel Verlustleistung, n-Kanal: 0 Betriebstemperatur, max.: 175°C directShipCharge: 25 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) |