SQ1922AEEH-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 20V .85A SOT-36
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET N-CH DUAL 20V .85A SOT-36
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
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Produktbewertung abgeben
Technische Details SQ1922AEEH-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ1922AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 850 mA, 850 mA, 0.21 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 850mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 850mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.21ohm, Verlustleistung, p-Kanal: 1.5W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.21ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.5W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote SQ1922AEEH-T1_GE3 nach Preis ab 0.21 EUR bis 0.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SQ1922AEEH-T1_GE3 | Hersteller : Vishay / Siliconix | MOSFETs Dual Nch 20V Vds SOT-363 |
auf Bestellung 145066 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1922AEEH-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH DUAL 20V .85A SOT-36 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 27676 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1922AEEH-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ1922AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 850 mA, 850 mA, 0.21 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 850mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 850mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.21ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.21ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 175°C SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 7545 Stücke: Lieferzeit 14-21 Tag (e) |