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SQ1563AEH-T1_GE3 Vishay Semiconductors
auf Bestellung 392038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.83 EUR |
10+ | 0.67 EUR |
100+ | 0.49 EUR |
500+ | 0.42 EUR |
1000+ | 0.32 EUR |
3000+ | 0.27 EUR |
9000+ | 0.24 EUR |
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Technische Details SQ1563AEH-T1_GE3 Vishay Semiconductors
Description: MOSFET N/P-CH 20V POWERPAKSC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V, Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Weitere Produktangebote SQ1563AEH-T1_GE3 nach Preis ab 0.34 EUR bis 0.88 EUR
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SQ1563AEH-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1563AEH-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQ1563AEH-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 89pF @ 10V, 84pF @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V, 1.33nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
Produkt ist nicht verfügbar |