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SPW16N50C3 Infineon Technologies
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Description: SPW16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
141+ | 3.51 EUR |
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Technische Details SPW16N50C3 Infineon Technologies
Description: SPW16N50 - 500V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 675µA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote SPW16N50C3 nach Preis ab 3.1 EUR bis 4.33 EUR
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SPW16N50C3 | Hersteller : Infineon Technologies |
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auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW16N50C3 | Hersteller : Infineon technologies |
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auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
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SPW16N50C3 | Hersteller : NFINEON |
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auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |