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SPI08N80C3 Infineon Technologies
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details SPI08N80C3 Infineon Technologies
Description: MOSFET N-CH 800V 8A TO262-3, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 470µA, Supplier Device Package: PG-TO262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
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SPI08N80C3 | Hersteller : Infineon technologies |
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auf Bestellung 480 Stücke: Lieferzeit 21-28 Tag (e) |
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SPI08N80C3 | Hersteller : INF |
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auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPI08N80C3 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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SPI08N80C3 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 470µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
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