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SPD02N50C3 Infineon Technologies
auf Bestellung 2155 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details SPD02N50C3 Infineon Technologies
Description: MOSFET N-CH 560V 1.8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 80µA, Supplier Device Package: PG-TO252-3-11, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 560 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V.
Weitere Produktangebote SPD02N50C3
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SPD02N50C3 | Hersteller : INFINEON |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD02N50C3 | Hersteller : INFINEON |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD02N50C3 | Hersteller : INFINEON |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPD02N50C3 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 80µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V |
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