SPB80N06S08ATMA1 Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 10.15 EUR |
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Technische Details SPB80N06S08ATMA1 Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V.
Weitere Produktangebote SPB80N06S08ATMA1 nach Preis ab 10.15 EUR bis 10.15 EUR
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SPB80N06S08ATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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SPB80N06S08ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SPB80N06S08ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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SPB80N06S08ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V |
Produkt ist nicht verfügbar |