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SPB07N60C3 Infineon Technologies
auf Bestellung 2287 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details SPB07N60C3 Infineon Technologies
Description: SPB07N60 - 600V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 350µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V.
Weitere Produktangebote SPB07N60C3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SPB07N60C3 | Hersteller : INFINEON |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB07N60C3 | Hersteller : infineon |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB07N60C3 | Hersteller : INFINEON |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SPB07N60C3 Produktcode: 156286 |
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Produkt ist nicht verfügbar
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SPB07N60C3 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 350µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
Produkt ist nicht verfügbar |