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SPA11N60C3 Infineon Technologies
auf Bestellung 1130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.26 EUR |
10+ | 4.79 EUR |
25+ | 3.48 EUR |
100+ | 3.15 EUR |
250+ | 2.94 EUR |
500+ | 2.92 EUR |
1000+ | 2.59 EUR |
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Technische Details SPA11N60C3 Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 500µA, Supplier Device Package: PG-TO220-3-111, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote SPA11N60C3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SPA11N60C3 | Hersteller : INF |
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auf Bestellung 69400 Stücke: Lieferzeit 21-28 Tag (e) |
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SPA11N60C3 | Hersteller : Infineon |
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auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) |
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SPA11N60C3 | Hersteller : INFINEON |
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auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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SPA11N60C3 Produktcode: 129255 |
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Produkt ist nicht verfügbar
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SPA11N60C3 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 500µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |