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SMDJ11CA NextGen Components
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Description: TVS Diode 3000W 11V BI SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 164.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMDJ11CA NextGen Components
Description: TVS Diode 3000W 11V BI SMD, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 164.8A, Voltage - Reverse Standoff (Typ): 11V, Supplier Device Package: SMC (DO-214AB), Bidirectional Channels: 1, Voltage - Breakdown (Min): 12.2V, Voltage - Clamping (Max) @ Ipp: 18.2V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No.
Weitere Produktangebote SMDJ11CA nach Preis ab 0.67 EUR bis 1.54 EUR
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SMDJ11CA | Hersteller : Littelfuse |
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auf Bestellung 3395 Stücke: Lieferzeit 10-14 Tag (e) |
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SMDJ11CA | Hersteller : DC COMPONENTS |
![]() Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.84A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 164.84A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 2 Stücke |
Produkt ist nicht verfügbar |
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SMDJ11CA | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 3kW; 12.85V; 164.8A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 164.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SMDJ11CA | Hersteller : DC COMPONENTS |
![]() Description: Diode: TVS; 3kW; 12.2÷13.5V; 164.84A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 164.84A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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![]() |
SMDJ11CA | Hersteller : LITTELFUSE |
![]() Description: Diode: TVS; 3kW; 12.85V; 164.8A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 164.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |