SMBTA56E6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Description: TRANS PNP 80V 0.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
auf Bestellung 203000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6204+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMBTA56E6327HTSA1 Infineon Technologies
Description: TRANS PNP 80V 0.5A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT23, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 330 mW.
Weitere Produktangebote SMBTA56E6327HTSA1 nach Preis ab 0.072 EUR bis 0.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 34990 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 34990 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A |
auf Bestellung 2876 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon |
PNP 80V 0.5A 330mW 100MHz SMBTA56E6327HTSA1 SMBTA56E6327 Infineon TSMBTA56 Anzahl je Verpackung: 500 Stücke |
auf Bestellung 2390 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - SMBTA56E6327HTSA1 - SMBTA56 - GENERAL PURPOSE TRANSISTOR tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14774 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies | Trans GP BJT PNP 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
||||||||||||||||||
SMBTA56E6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PNP 80V 0.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |