SMB10J12AHE3/52 Vishay Semiconductors
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Technische Details SMB10J12AHE3/52 Vishay Semiconductors
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ, Type of diode: TVS, Mounting: SMD, Kind of package: reel; tape, Case: SMB, Semiconductor structure: unidirectional, Manufacturer series: SMBJ, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Max. forward impulse current: 50.3A, Peak pulse power dissipation: 1kW, Max. off-state voltage: 12V, Breakdown voltage: 13.3V, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SMB10J12AHE3/52
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SMB10J12AHE3/52 | Hersteller : VISHAY |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® Max. forward impulse current: 50.3A Peak pulse power dissipation: 1kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMB10J12AHE3/52 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 19.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 50.3A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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SMB10J12AHE3/52 | Hersteller : VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® Max. forward impulse current: 50.3A Peak pulse power dissipation: 1kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Leakage current: 5µA |
Produkt ist nicht verfügbar |