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SMB10J12AHE3/52 Vishay Semiconductors
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Technische Details SMB10J12AHE3/52 Vishay Semiconductors
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ, Mounting: SMD, Case: SMB, Manufacturer series: SMBJ, Kind of package: reel; tape, Max. forward impulse current: 50.3A, Breakdown voltage: 13.3V, Leakage current: 5µA, Type of diode: TVS, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Peak pulse power dissipation: 1kW, Max. off-state voltage: 12V, Semiconductor structure: unidirectional, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SMB10J12AHE3/52
Foto | Bezeichnung | Hersteller | Beschreibung |
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SMB10J12AHE3/52 | Hersteller : VISHAY |
![]() Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Mounting: SMD Case: SMB Manufacturer series: SMBJ Kind of package: reel; tape Max. forward impulse current: 50.3A Breakdown voltage: 13.3V Leakage current: 5µA Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1kW Max. off-state voltage: 12V Semiconductor structure: unidirectional Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMB10J12AHE3/52 | Hersteller : Vishay Semiconductor Diodes Division |
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Produkt ist nicht verfügbar |
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SMB10J12AHE3/52 | Hersteller : VISHAY |
![]() Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Mounting: SMD Case: SMB Manufacturer series: SMBJ Kind of package: reel; tape Max. forward impulse current: 50.3A Breakdown voltage: 13.3V Leakage current: 5µA Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 1kW Max. off-state voltage: 12V Semiconductor structure: unidirectional |
Produkt ist nicht verfügbar |