SiUD403ED-T1-GE3 Vishay / Siliconix
auf Bestellung 26440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| 9000+ | 0.097 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SiUD403ED-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.
Weitere Produktangebote SiUD403ED-T1-GE3 nach Preis ab 0.17 EUR bis 0.67 EUR
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SiUD403ED-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 500MA PPAK 0806Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
auf Bestellung 5533 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD403ED-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R |
Produkt ist nicht verfügbar |
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| SiUD403ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SiUD403ED-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 500MA PPAK 0806 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SiUD403ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |