auf Bestellung 34198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.16 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.89 EUR |
| 3000+ | 0.85 EUR |
| 6000+ | 0.84 EUR |
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Technische Details SISS76LDN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc), Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V.
Weitere Produktangebote SISS76LDN-T1-GE3 nach Preis ab 0.82 EUR bis 2.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SISS76LDN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 70V 19.6A/67.4A PPAKPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS76LDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS76LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 54A; Idm: 120A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 70V Drain current: 54A Pulsed drain current: 120A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS76LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 70V; 54A; Idm: 120A; 36W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 70V Drain current: 54A Pulsed drain current: 120A Power dissipation: 36W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |