SISS5112DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.01 EUR |
| 6000+ | 0.96 EUR |
| 9000+ | 0.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISS5112DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V.
Weitere Produktangebote SISS5112DN-T1-GE3 nach Preis ab 0.96 EUR bis 2.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SISS5112DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SISS5112DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET N-CHANNEL 100-V (D-S) MOSFET |
auf Bestellung 5892 Stücke: Lieferzeit 10-14 Tag (e) |
|