SISS5108DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 2.33 EUR |
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Technische Details SISS5108DN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V.
Weitere Produktangebote SISS5108DN-T1-GE3 nach Preis ab 1.23 EUR bis 2.83 EUR
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SISS5108DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs N-Channel 100-V (D-S) MOSFET PowerPAK 1212-8S, 10.5 mohm a. 10V 10.2 mohm a. 7.5V |
auf Bestellung 2347 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS5108DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 6000 Stücke |
Produkt ist nicht verfügbar |
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SISS5108DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SISS5108DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A Technology: TrenchFET® Mounting: SMD Kind of package: reel; tape Power dissipation: 65.7W Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 55.9A On-state resistance: 12.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |