SISS42LDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 11.3A/39A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.85 EUR |
| 6000+ | 0.81 EUR |
| 9000+ | 0.77 EUR |
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Technische Details SISS42LDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 11.3A/39A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V.
Weitere Produktangebote SISS42LDN-T1-GE3 nach Preis ab 0.83 EUR bis 2.06 EUR
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SISS42LDN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 43341 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS42LDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 11.3A/39A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V |
auf Bestellung 18486 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS42LDN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISS42LDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 39 A, 0.0122 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 57W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0122ohm |
auf Bestellung 18542 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS42LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 31.2A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 100V Drain current: 31.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS42LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 31.2A; Idm: 80A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Gate charge: 48nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 100V Drain current: 31.2A On-state resistance: 18mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |