![SISS30DN-T1-GE3 SISS30DN-T1-GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/742;6008;;8.jpg)
SISS30DN-T1-GE3 Vishay Siliconix
![siss30dn.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.74 EUR |
6000+ | 0.7 EUR |
9000+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISS30DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc), Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V.
Weitere Produktangebote SISS30DN-T1-GE3 nach Preis ab 0.71 EUR bis 1.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SISS30DN-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc) Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
SISS30DN-T1-GE3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 5850 Stücke: Lieferzeit 115-119 Tag (e) |
|
||||||||||||||||
![]() |
SISS30DN-T1-GE3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
SISS30DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Mounting: SMD Power dissipation: 36W Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SISS30DN-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Mounting: SMD Power dissipation: 36W Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A |
Produkt ist nicht verfügbar |