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SISHA06DN-T1-GE3

SISHA06DN-T1-GE3 Vishay Semiconductors

sisha06dn.pdf Hersteller: Vishay Semiconductors
MOSFET N-Channel 30 V (D-S) MOSFET SH, 3 mO 10V, 4 mO 4.5V
auf Bestellung 11939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.6 EUR
10+ 1.32 EUR
100+ 1.03 EUR
500+ 0.87 EUR
1000+ 0.74 EUR
3000+ 0.63 EUR
Mindestbestellmenge: 2
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Technische Details SISHA06DN-T1-GE3 Vishay Semiconductors

Description: N-CHANNEL 30 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V.

Weitere Produktangebote SISHA06DN-T1-GE3 nach Preis ab 1.51 EUR bis 1.69 EUR

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SISHA06DN-T1-GE3 SISHA06DN-T1-GE3 Hersteller : Vishay Siliconix sisha06dn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.69 EUR
12+ 1.51 EUR
Mindestbestellmenge: 11
SISHA06DN-T1-GE3 SISHA06DN-T1-GE3 Hersteller : Vishay Siliconix sisha06dn.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 15 V
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