auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.89 EUR |
| 6000+ | 0.82 EUR |
| 9000+ | 0.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS443DN-T1-GE3 Vishay
Description: MOSFET P-CH 40V 35A PPAK 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V.
Weitere Produktangebote SIS443DN-T1-GE3 nach Preis ab 0.82 EUR bis 3.06 EUR
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SIS443DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 35A PPAK 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 35A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4370 pF @ 20 V |
auf Bestellung 50533 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -40V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 44707 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -35A On-state resistance: 11.7mΩ Type of transistor: P-MOSFET Power dissipation: 33W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2928 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -80A; 33W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -35A On-state resistance: 11.7mΩ Type of transistor: P-MOSFET Power dissipation: 33W Polarisation: unipolar |
auf Bestellung 2928 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIS443DN-T1-GE3 - MOSFET, P-CH, -40V, -35A, 150DEG C, 52W tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0097ohm directShipCharge: 25 SVHC: Lead |
auf Bestellung 24256 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS443DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 35A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |