Technische Details SIRS700DP-T1-RE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 102A, Pulsed drain current: 350A, Power dissipation: 84W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 4.3mΩ, Mounting: SMD, Gate charge: 130nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIRS700DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIRS700DP-T1-RE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 30A T/R |
Produkt ist nicht verfügbar |
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SIRS700DP-T1-RE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 30A T/R |
Produkt ist nicht verfügbar |
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| SIRS700DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 350A Power dissipation: 84W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIRS700DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 102A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 102A Pulsed drain current: 350A Power dissipation: 84W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |