SiRS4301DP-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFETs P-Channel 30 V (D-S) MOSFET PowerPAK SO-8, 1.5 mohm a. 10V, 2.3 mohm a. 4.5V
auf Bestellung 7590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.47 EUR |
| 10+ | 4.59 EUR |
| 25+ | 4.33 EUR |
| 100+ | 3.71 EUR |
| 250+ | 3.52 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.01 EUR |
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Technische Details SiRS4301DP-T1-GE3 Vishay / Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 7.4W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V.
Weitere Produktangebote SiRS4301DP-T1-GE3 nach Preis ab 2.64 EUR bis 5.42 EUR
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| SiRS4301DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SiRS4301DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V |
auf Bestellung 5720 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIRS4301DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 227A T/R |
Produkt ist nicht verfügbar |
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SIRS4301DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 227A T/R |
Produkt ist nicht verfügbar |