SIRA62DP-T1-RE3 Vishay / Siliconix
auf Bestellung 6873 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.47 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.93 EUR |
| 3000+ | 0.91 EUR |
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Technische Details SIRA62DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 51.4A/80A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V.
Weitere Produktangebote SIRA62DP-T1-RE3 nach Preis ab 2.21 EUR bis 2.46 EUR
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SIRA62DP-T1-RE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 51.4A/80A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA62DP-T1-RE3 | Hersteller : VISHAY |
Description: VISHAY - SIRA62DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 80 A, 0.001 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 80 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 65.7 Gate-Source-Schwellenspannung, max.: 2.2 Verlustleistung: 65.7 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.001 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.001 SVHC: Lead (19-Jan-2021) |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRA62DP-T1-RE3 | Hersteller : VISHAY |
Description: VISHAY - SIRA62DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 30 V, 80 A, 0.001 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Verlustleistung: 65.7 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.001 Qualifikation: - usEccn: EAR99 SVHC: Lead (19-Jan-2021) |
auf Bestellung 5990 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRA62DP-T1-RE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 51.4A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIRA62DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W Mounting: SMD Case: PowerPAK® SO8 Drain current: 80A On-state resistance: 1.85mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 93nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIRA62DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 51.4A/80A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SIRA62DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W Mounting: SMD Case: PowerPAK® SO8 Drain current: 80A On-state resistance: 1.85mΩ Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 93nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -12...16V Pulsed drain current: 300A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |