![SIRA50DP-T1-RE3 SIRA50DP-T1-RE3](https://www.mouser.com/images/vishay/lrg/PowerPAK_SO_8_SPL.jpg)
SIRA50DP-T1-RE3 Vishay / Siliconix
auf Bestellung 815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.6 EUR |
10+ | 2.16 EUR |
100+ | 1.72 EUR |
500+ | 1.45 EUR |
1000+ | 1.44 EUR |
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Technische Details SIRA50DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 62.5A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V.
Weitere Produktangebote SIRA50DP-T1-RE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIRA50DP-T1-RE3 | Hersteller : VISHAY |
![]() Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 100 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 100 Gate-Source-Schwellenspannung, max.: 2.2 Verlustleistung: 100 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 860 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 860 SVHC: Lead (19-Jan-2021) |
auf Bestellung 3218 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRA50DP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 100A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 194nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIRA50DP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V |
Produkt ist nicht verfügbar |
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SIRA50DP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V |
Produkt ist nicht verfügbar |
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SIRA50DP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 100A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 194nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V |
Produkt ist nicht verfügbar |