auf Bestellung 1012 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 1.61 EUR |
Produktrezensionen
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Technische Details SIR870DP-T1-GE3 Vishay
Description: MOSFET N-CH 100V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V.
Weitere Produktangebote SIR870DP-T1-GE3 nach Preis ab 1.26 EUR bis 3.91 EUR
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SIR870DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
auf Bestellung 1012 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR870DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CHANNEL 100-V(D-S) |
auf Bestellung 10981 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V |
auf Bestellung 4171 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR870DP-T1-GE3 Produktcode: 197578 |
Verschiedene Bauteile > Verschiedene Bauteile 1 |
Produkt ist nicht verfügbar
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SIR870DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SIR870DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR870DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |