![SIR622DP-T1-GE3 SIR622DP-T1-GE3](https://static6.arrow.com/aropdfconversion/arrowimages/67bb435af33ecc73ba6e0422d9c92ec82f38b015/sirc06dp-t1-ge3.jpg)
auf Bestellung 4484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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131+ | 1.18 EUR |
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Technische Details SIR622DP-T1-GE3 Vishay
Description: MOSFET N-CH 150V 51.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc), Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V.
Weitere Produktangebote SIR622DP-T1-GE3 nach Preis ab 1.15 EUR bis 2.68 EUR
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SIR622DP-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 4484 Stücke: Lieferzeit 14-21 Tag (e) |
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SiR622DP-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 6000 Stücke: Lieferzeit 974-978 Tag (e) |
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SIR622DP-T1-GE3 | Hersteller : Vishay |
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SiR622DP-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SiR622DP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V |
Produkt ist nicht verfügbar |
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SiR622DP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V |
Produkt ist nicht verfügbar |
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SiR622DP-T1-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 51.6A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 51.6A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |