![SIR516DP-T1-RE3 SIR516DP-T1-RE3](https://www.mouser.com/images/vishay/lrg/PowerPAK_SO_8_SPL.jpg)
auf Bestellung 10100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.92 EUR |
10+ | 2.45 EUR |
100+ | 1.94 EUR |
500+ | 1.64 EUR |
1000+ | 1.41 EUR |
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Technische Details SIR516DP-T1-RE3 Vishay Semiconductors
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V.
Weitere Produktangebote SIR516DP-T1-RE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIR516DP-T1-RE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIR516DP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63.7A Pulsed drain current: 200A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR516DP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V |
Produkt ist nicht verfügbar |
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SIR516DP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V |
Produkt ist nicht verfügbar |
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SIR516DP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63.7A Pulsed drain current: 200A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |