SIR188DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 25.5A/60A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V
auf Bestellung 805 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.34 EUR |
| 10+ | 1.91 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.26 EUR |
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Technische Details SIR188DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 60V 25.5A/60A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 3.85mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V.
Weitere Produktangebote SIR188DP-T1-RE3 nach Preis ab 0.93 EUR bis 2.36 EUR
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SIR188DP-T1-RE3 | Hersteller : Vishay Semiconductors |
MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 7974 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR188DP-T1-RE3 | Hersteller : VISHAY |
Description: VISHAY - SIR188DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 0.0032 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 60 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 65.7 Gate-Source-Schwellenspannung, max.: 3.6 Verlustleistung: 65.7 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0032 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0032 SVHC: Lead (19-Jan-2021) |
auf Bestellung 23796 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR188DP-T1-RE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 25.5A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR188DP-T1-RE3 | Hersteller : VISHAY |
SIR188DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIR188DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 25.5A/60A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.85mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 30 V |
Produkt ist nicht verfügbar |