SIR172DP-T1-GE3 Vishay / Siliconix
auf Bestellung 3166 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details SIR172DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V, Power Dissipation (Max): 29.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V.
Weitere Produktangebote SIR172DP-T1-GE3
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auf Bestellung 4152 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR172DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V |
Produkt ist nicht verfügbar |
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SIR172DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V |
Produkt ist nicht verfügbar |