auf Bestellung 4581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.62 EUR |
10+ | 6.41 EUR |
25+ | 6.3 EUR |
100+ | 5.19 EUR |
250+ | 5.1 EUR |
500+ | 4.61 EUR |
1000+ | 3.94 EUR |
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Technische Details SIJH800E-T1-GE3 Vishay Semiconductors
Description: N-CHANNEL 80-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V.
Weitere Produktangebote SIJH800E-T1-GE3 nach Preis ab 3.97 EUR bis 7.67 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIJH800E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V |
auf Bestellung 2316 Stücke: Lieferzeit 10-14 Tag (e) |
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SIJH800E-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 80V 29A 5-Pin(4+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |
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SIJH800E-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 80V 29A 5-Pin(4+Tab) PowerPAK T/R |
Produkt ist nicht verfügbar |
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SIJH800E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A Mounting: SMD Drain-source voltage: 80V Drain current: 299A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.21µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Case: PowerPAK® 8x8L Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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SIJH800E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V |
Produkt ist nicht verfügbar |
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SIJH800E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 299A; Idm: 350A Mounting: SMD Drain-source voltage: 80V Drain current: 299A On-state resistance: 1.8mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.21µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Case: PowerPAK® 8x8L |
Produkt ist nicht verfügbar |