SIHW70N60EF-GE3 Vishay / Siliconix
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.88 EUR |
| 10+ | 16.65 EUR |
| 25+ | 16.19 EUR |
| 50+ | 15.29 EUR |
| 100+ | 14.38 EUR |
| 250+ | 13.04 EUR |
| 480+ | 13.02 EUR |
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Technische Details SIHW70N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 70A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 100 V.
Weitere Produktangebote SIHW70N60EF-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SIHW70N60EF-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 70A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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| SIHW70N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 229A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 229A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHW70N60EF-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 70A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| SIHW70N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 229A; 520W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 229A Power dissipation: 520W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 38mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |