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SIHS36N50D-E3 VISHAY
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 446W; SUPER247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 446W
Case: SUPER247
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |
3+ | 23.84 EUR |
7+ | 10.21 EUR |
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Technische Details SIHS36N50D-E3 VISHAY
Description: MOSFET N-CH 500V 36A SUPER-247, Packaging: Tube, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SUPER-247™ (TO-274AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V.
Weitere Produktangebote SIHS36N50D-E3 nach Preis ab 35.75 EUR bis 35.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHS36N50D-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 446W; SUPER247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 446W Case: SUPER247 Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHS36N50D-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHS36N50D-E3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHS36N50D-E3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V |
Produkt ist nicht verfügbar |