auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.86 EUR |
| 10+ | 4.22 EUR |
| 25+ | 3.61 EUR |
| 100+ | 3.27 EUR |
| 250+ | 3.01 EUR |
| 500+ | 2.69 EUR |
| 1000+ | 2.52 EUR |
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Technische Details SiHP23N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 23A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V.
Weitere Produktangebote SiHP23N60E-GE3 nach Preis ab 2.71 EUR bis 6.04 EUR
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SiHP23N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 23A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V |
auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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