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SIHP17N80AEF-GE3 Vishay Siliconix
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Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.24 EUR |
10+ | 2.69 EUR |
100+ | 2.14 EUR |
500+ | 1.93 EUR |
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Technische Details SIHP17N80AEF-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V.
Weitere Produktangebote SIHP17N80AEF-GE3 nach Preis ab 2.06 EUR bis 4.58 EUR
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SIHP17N80AEF-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP17N80AEF-GE3 | Hersteller : VISHAY |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 179W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.263ohm |
auf Bestellung 958 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP17N80AEF-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SIHP17N80AEF-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP17N80AEF-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |