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SIHP14N60E-BE3 Vishay Siliconix
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Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.6 EUR |
50+ | 2.09 EUR |
100+ | 1.72 EUR |
500+ | 1.55 EUR |
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Technische Details SIHP14N60E-BE3 Vishay Siliconix
Description: N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V.
Weitere Produktangebote SIHP14N60E-BE3 nach Preis ab 1.62 EUR bis 2.62 EUR
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SIHP14N60E-BE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 1660 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP14N60E-BE3 | Hersteller : Vishay |
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SIHP14N60E-BE3 | Hersteller : Vishay |
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SIHP14N60E-BE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 32A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP14N60E-BE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 32A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: THT Gate charge: 64nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |